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We report a narrow-linewidth laser based on thin-film lithium tantalate (TFLT). The laser is composed of an InP reflective semiconductor optical amplifier gain chip hybrid integrated with a TFLT waveguide external cavity cladded with a silicon oxide extended Bragg grating. The single-frequency laser device achieves an on-chip output power of approximately 26 mW and an intrinsic Lorentzian linewidth of ~94 Hz. These results highlight the great potential of TFLT for integrated photonic laser applications, enabling high-coherence and high-power laser sources in a compact platform. 

Abstract The invention of the laser unleashed the potential of optical metrology, leading to numerous advancements in modern science and technology. This reliance on lasers, however, also introduces a bottleneck for precision optical metrology, as it requires sophisticated photonic infrastructure for precise laser-wave control, leading to limited metrology performance and significant system complexity. Here, we take a key step toward overcoming this challenge by demonstrating a Pockels laser with multifunctional capabilities that elevate optical metrology to a new level. The chip-scale laser achieves a narrow intrinsic linewidth down to 167 Hz and a broad mode-hop-free tuning range up to 24 GHz. In particular, it delivers an unprecedented frequency chirping rate of up to 20 EHz/s and an exceptional modulation bandwidth exceeding 10 GHz, both of which are orders of magnitude greater than those of existing lasers. Leveraging this laser, we successfully achieve velocimetry at 40 m/s over a short distance of 0.4 m, and measurable velocities up to the first cosmic velocity at 1 m away—a feat unattainable with conventional ranging approaches. At the same time, we achieve distance metrology with a ranging resolution of <2 cm. Furthermore, for the first time to our knowledge, we implement a dramatically simplified architecture for laser frequency stabilization by directly locking the laser to an external reference gas cell without requiring additional external light control. This approach enables long-term laser stability with a frequency fluctuation of only ±6.5 MHz over 60 min. The demonstrated Pockels laser combines elegantly high laser coherence with ultrafast frequency reconfigurability and superior multifunctional capability. We envision its profound impact across diverse fields including communication, sensing, autonomous driving, quantum information processing, and beyond. 

Abstract Processing information in the optical domain promises advantages in both speed and energy efficiency over existing digital hardware for a variety of emerging applications in artificial intelligence and machine learning. A typical approach to photonic processing is to multiply a rapidly changing optical input vector with a matrix of fixed optical weights. However, encoding these weights on-chip using an array of photonic memory cells is currently limited by a wide range of material- and device-level issues, such as the programming speed, extinction ratio and endurance, among others. Here we propose a new approach to encoding optical weights for in-memory photonic computing using magneto-optic memory cells comprising heterogeneously integrated cerium-substituted yttrium iron garnet (Ce:YIG) on silicon micro-ring resonators. We show that leveraging the non-reciprocal phase shift in such magneto-optic materials offers several key advantages over existing architectures, providing a fast (1 ns), efficient (143 fJ per bit) and robust (2.4 billion programming cycles) platform for on-chip optical processing. 

Integrated photonic microresonators have become an essential resource for generating photonic qubits for quantum information processing, entanglement distribution and networking, and quantum communications. The pair-generation rate is enhanced by reducing the microresonator radius, but this comes at the cost of increasing the frequency-mode spacing and reducing the quantum information spectral density. Here, we circumvent this rate-density trade-off in an $\mathrm{Al}\mathrm{Ga}\mathrm{As}$-on-insulator photonic device by multiplexing an array of 20 small-radius microresonators, each producing a 650-GHz-spaced comb of time-energy entangled-photon pairs. The resonators can be independently tuned via integrated thermo-optic heaters, enabling control of the mode spacing from degeneracy up to a full free spectral range. We demonstrate simultaneous pumping of five resonators with up to $50$-GHz relative comb offsets, where each resonator produces pairs exhibiting time-energy entanglement visibilities up to $95\mathrm{\%}$, coincidence-to-accidental ratios exceeding $5000$, and an on-chip pair rate up to $2.6{\mathrm{G}\mathrm{Hz}/\mathrm{mW}}^2$per comb line—an improvement over prior work by more than a factor of 40. As a demonstration, we generate frequency-bin qubits in a maximally entangled two-qubit Bell state with fidelity exceeding $87\mathrm{\%}$( $90\mathrm{\%}$with background correction) and detected frequency-bin entanglement rates up to 7 kHz (an approximately $70$MHz on-chip pair rate) using a pump power of approximately $250\text{μ}\mathrm{W}$. Multiplexing small-radius microresonators combines the key capabilities required for programmable and dense photonic qubit encoding while retaining high pair-generation rates, heralded single-photon purity, and entanglement fidelity. Published by the American Physical Society2025 

In the past decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform that emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, <6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The GaAs optical gain regions are heterogeneously integrated with low-loss SiN waveguides. The narrow linewidth lasing is achieved with an extended cavity consisting of a resonator-based Vernier mirror and a phase shifter. Utilizing synchronous tuning of the integrated heaters, we show mode-hop-free wavelength tuning over a range larger than 100 GHz (200 pm). To demonstrate the potential of the device, we investigate two illustrative applications: (i) the linear characterization of a silicon nitride microresonator designed for entangled-photon pair generation and (ii) the absorption spectroscopy and locking to the D1 and D2 transition lines of 87Rb. The performance of the proposed integrated laser holds promise for a broader spectrum of both classical and quantum applications in the visible range, encompassing communication, control, sensing, and computing. 

The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas, such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a nonlinear platform—InGaP-on-insulator—optimized for visible-to-telecommunication wavelength χ(2) nonlinear optical processes. In this work, we detail our 100 mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000 s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400–900 GHz. We demonstrate intrinsic resonator quality factors as high as 324 000 (440 000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB/cm (1.22 dB/cm) propagation loss. We analyze the loss vs waveguide width and resonator radius to establish the operating regime for optimal 775–1550 nm phase matching. By combining the high χ(2) and χ(3) optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation.